62712 tkim/33011pe tkim tc-00002321 no. a1939-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 SCH1335 p-channel power mosfet ? 12v, ? 2.5a, 112m , single sch6 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? 1.8v drive ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --12 v gate-to-source voltage v gss 10 v drain current (dc) i d --2.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% --10 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7028-002 ordering number : ena1939a product & package information ? package : sch6 ? jeita, jedec : sot-563 ? minimum packing quantity : 5,000 pcs./reel packing type : tl marking electrical connection 1.6 1.6 1.5 0.05 0.5 0.05 0.56 0.25 0.2 0.2 1 3 2 64 5 1 : drain 2 : drain 3 : gate 4 : source 5 : drain 6 : drain sch6 3 4 1, 2, 5, 6 tl yl lot no. lot no. SCH1335-tl-h
SCH1335 no. a1939-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --12 v zero-gate voltage drain current i dss v ds =--12v, v gs =0v --10 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--6v, i d =--1ma --0.4 --1.3 v forward transfer admittance | yfs | v ds =--6v, i d =--1a 3.3 s static drain-to-source on-state resistance r ds (on)1 i d =--1a, v gs =--4.5v 86 112 m r ds (on)2 i d =--0.5a, v gs =--2.5v 125 175 m r ds (on)3 i d =--0.2a, v gs =--1.8v 185 285 m input capacitance ciss v ds =--6v, f=1mhz 270 pf output capacitance coss 90 pf reverse transfer capacitance crss 72 pf turn-on delay time t d (on) see speci ed test circuit. 6.5 ns rise time t r 21 ns turn-off delay time t d (off) 33 ns fall time t f 33 ns total gate charge qg v ds =--6v, v gs =--4.5v, i d =--2.5a 3.1 nc gate-to-source charge qgs 0.7 nc gate-to-drain ?miller? charge qgd 0.9 nc diode forward voltage v sd i s =--2.5a, v gs =0v --0.84 --1.2 v switching time test circuit ordering information device package shipping memo SCH1335-tl-h sch6 5,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d = --1a r l =6 v dd = --6v v out v in 0v --4.5v v in SCH1335
SCH1335 no. a1939-3/7 i d -- v ds i d -- v gs drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v 0 --2.5 --2.0 --1.5 --0.5 --1.0 --0.5 0 --3.0 --2.0 --1.5 --2.5 --1.0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 it16351 0 --0.4 --0.2 --0.6 --2.0 --1.0 --0.8 --1.4 --1.2 --1.6 --1.8 -- 2 5 c it16352 --4.5v ta=75 c v ds = --6v 25 c v gs = --1.2v --6.0v --1.8v --1.5v --8.0v --2.5v ta=25 c i s -- v sd | y fs | -- i d forward transfer admittance, | y fs | -- s drain current, i d -- a source current, i s -- a diode forward voltage, v sd -- v sw time -- i d ciss, coss, crss -- v ds switching time, sw time -- ns ciss, coss, crss -- pf drain current, i d -- a drain-to-source voltage, v ds -- v r ds (on) -- ta r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v ambient temperature, ta -- c i s -- v sd it16355 it16356 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.4 --1.2 0.1 1.0 10 7 7 5 3 2 2 5 3 --0.1 --1.0 23 57 --10 7 --0.01 23 57 23 5 ta= --25 c v ds = --6v --0.001 2 v gs =0v --0.1 --1.0 23 57 --10 23 57 v dd = --6v v gs = --4.5v t d (on) t d (off) t f it16357 0 --2 --4 --6 3 7 5 7 5 3 2 100 1000 10 2 --8 --12 --10 ciss coss crss it16358 10 100 1.0 2 3 7 5 7 5 2 3 ta=75 c 25 c --25 c f=1mhz t r 0 --1 --3 --5 --10 --7 --8 --9 -- 2 -- 4 -- 6 150 100 50 250 200 300 350 400 0 50 150 100 200 250 0 it16353 it16354 i d = --0.2a --1.0a ta=25 c 75 c 25 c 3 --0.1 7 5 2 3 --0.01 7 5 2 3 7 7 5 --1.0 --10 2 3 5 --80 --60 --40 --20 0 20 40 60 80 100 120 140 180 160 v gs = --1.8v, i d = --0.2a v gs = --4.5v, i d = --1.0a v gs = --2.5v, i d = --0.5a --0.5a
SCH1335 no. a1939-4/7 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a 2 3 5 7 2 --0.1 3 5 7 2 --1.0 --0.01 23 57 23 57 --0.1 --1.0 --10 23 57 --100 it16360 10ms 100ms operation in this area is limited by r ds (on). i d = --2.5a dc operation ( ta=25 c ) i dp = --10a (pw 10 s) 1ms 3 5 7 2 --10 3 5 7 --100 100 s 0 3.5 1.5 0.5 1.0 2.0 2.5 3.0 it16359 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 v ds = --6v i d = --2.5a ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it16361 0 0 20 40 60 80 100 140 120 1.0 0.6 0.4 0.8 0.2 160 when mounted on ceramic substrate (900mm 2 0.8mm)
SCH1335 no. a1939-5/7 taping speci cation SCH1335-tl-h
SCH1335 no. a1939-6/7 outline drawing land pattern example SCH1335-tl-h mass (g) unit 0.004 * for reference mm unit: mm 0.4 0.3 0.5 0.5 1.4
SCH1335 ps no. a1939-7/7 note on usage : since the SCH1335 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
|
